Invention Grant
US07864619B2 Write driver circuit for phase-change memory, memory including the same, and associated methods
有权
为相变存储器写入驱动电路，包含相同的存储器及相关方法
- Patent Title: Write driver circuit for phase-change memory, memory including the same, and associated methods
- Patent Title (中): 为相变存储器写入驱动电路，包含相同的存储器及相关方法
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Application No.: US12292200Application Date: 2008-11-13
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Publication No.: US07864619B2Publication Date: 2011-01-04
- Inventor: Beak-hyung Cho , Kwang-ho Kim , Young-pil Kim
- Applicant: Beak-hyung Cho , Kwang-ho Kim , Young-pil Kim
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2007-0115488 20071113
- Main IPC: G11C8/00
- IPC: G11C8/00 ; G11C5/14 ; G11C11/00
Abstract:
A write driver circuit for a memory that includes phase-change memory cells changeable between a RESET state resistance and a SET state resistance in response to an applied current pulse, the write driver circuit including a write current level adjusting unit configured to determine first to n-th SET state current levels in response to a SET state current level signal, where n is an integer greater than 1, and configured to determine a RESET state current level in response to a RESET state current level signal, and a write current output unit configured to generate one of a SET state current pulse and a RESET state current pulse corresponding to a SET state current level or a RESET state current level determined by the write current level adjusting unit.
Public/Granted literature
- US20090122593A1 Write driver circuit for phase-change memory, memory including the same, and associated methods Public/Granted day:2009-05-14
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