Invention Grant
- Patent Title: Multi-chip flash memory device and copy-back method thereof
- Patent Title (中): 多芯片闪存装置及其复制方法
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Application No.: US11646500Application Date: 2006-12-28
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Publication No.: US07865657B2Publication Date: 2011-01-04
- Inventor: In-Young Kim , Young-Joon Choi , Jong-Hwa Kim , Soon-Young Kim
- Applicant: In-Young Kim , Young-Joon Choi , Jong-Hwa Kim , Soon-Young Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2006-0097467 20061003
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A method and device for copying-back data in a multi-chip flash memory device having first and second memory chips. The method may include reading first source data from a first source region of one of the memory chips; programming the first source data into a target region included in one of the memory chips and reading second source data from second source region of the other memory chip different from the memory chip including the target region. Reading the second source data may be carried out while programming the first source data.
Public/Granted literature
- US20080082730A1 Multi-chip flash memory device and copy-back method thereof Public/Granted day:2008-04-03
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