Invention Grant
US07865809B1 Data error detection and correction in non-volatile memory devices
有权
非易失性存储器件中的数据错误检测和校正
- Patent Title: Data error detection and correction in non-volatile memory devices
- Patent Title (中): 非易失性存储器件中的数据错误检测和校正
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Application No.: US12166191Application Date: 2008-07-01
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Publication No.: US07865809B1Publication Date: 2011-01-04
- Inventor: Charles C. Lee , I-Kang Yu , Abraham Chih-Kang Ma , Ming-Shiang Shen
- Applicant: Charles C. Lee , I-Kang Yu , Abraham Chih-Kang Ma , Ming-Shiang Shen
- Applicant Address: US CA San Jose
- Assignee: Super Talent Electronics, Inc.
- Current Assignee: Super Talent Electronics, Inc.
- Current Assignee Address: US CA San Jose
- Agent Roger H. Chu
- Main IPC: H03M13/00
- IPC: H03M13/00

Abstract:
Data error detection and correction in non-volatile memory devices are disclosed. Data error detection and correction can be performed with software, hardware or a combination of both. Generally an error corrector is referred to as an ECC (error correction code). One of the most relevant codes using in non-volatile memory devices is based on BCH (Bose, Ray-Chaudhuri, Hocquenghem) code. In order to correct reasonable number (e.g., up to 8-bit (eight-bit)) of random errors in a chunk of data (e.g., a codeword of 4200-bit with 4096-bit information data), a BCH(4200,4096,8) is used in GF(213). ECC comprises encoder and decoder. The decoder further comprises a plurality of error detectors and one error corrector. The plurality of error decoders is configured for calculating odd terms of syndrome polynomial for multiple channels in parallel, while the error corrector is configured for sequentially calculating even terms of syndrome polynomial, key solver and error location.
Information query
IPC分类: