Invention Grant
- Patent Title: Thin-film deposition system
- Patent Title (中): 薄膜沉积系统
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Application No.: US12122781Application Date: 2008-05-19
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Publication No.: US07866278B2Publication Date: 2011-01-11
- Inventor: Toru Takashima , Yoshikazu Homma
- Applicant: Toru Takashima , Yoshikazu Homma
- Applicant Address: JP Tokyo
- Assignee: JEOL Ltd.
- Current Assignee: JEOL Ltd.
- Current Assignee Address: JP Tokyo
- Agency: The Webb Law Firm
- Priority: JP2007-261786 20071005
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C14/00 ; C25B11/00 ; C25B13/00

Abstract:
A thin-film deposition system has a vacuum chamber and a plasma generator. The plasma generator includes a case, a cathode disposed in the case, an anode assembly disposed at an end of the case, a discharge power supply for applying a discharge voltage between the cathode and the anode assembly, and a gas supply means for supplying a discharge gas into the case. Electrons within a first plasma produced in the case are extracted into the vacuum chamber according to the discharge voltage. An evaporated material in a gaseous state inside the vacuum chamber is irradiated with electrons emitted from the plasma generator to produce a second plasma. The potential at the anode assembly is controlled by anode potential-controlling means such that the electrons within the second plasma are directed at the plasma generator and the ions within the second plasma are directed at the substrate.
Public/Granted literature
- US20090090619A1 Thin-Film Deposition System Public/Granted day:2009-04-09
Information query
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