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US07867693B1 Methods for forming device structures on a wafer 有权
在晶片上形成器件结构的方法

Methods for forming device structures on a wafer
Abstract:
Methods for forming device structures on a wafer are provided. One method includes transferring approximately an inverse of patterned features formed in a positive resist layer on the wafer to a device material on the wafer to form the device structures in the device material. Another method includes transferring approximately an inverse of patterned features formed in a sacrificial layer on the wafer to a device material on the wafer to form the device structures in the device material.
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