Invention Grant
- Patent Title: Nanoscale moiety placement methods
- Patent Title (中): 纳米级部分放置方法
-
Application No.: US11583285Application Date: 2006-10-19
-
Publication No.: US07867782B2Publication Date: 2011-01-11
- Inventor: Phillip W. Barth
- Applicant: Phillip W. Barth
- Applicant Address: US CA Santa Clara
- Assignee: Agilent Technologies, Inc.
- Current Assignee: Agilent Technologies, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: G01N33/543
- IPC: G01N33/543
Abstract:
Methods and structures for placing nanoscale moieties on substrates are provided.
Public/Granted literature
- US20080096287A1 Nanoscale moiety placement methods Public/Granted day:2008-04-24
Information query
IPC分类:
