Invention Grant
- Patent Title: Spin-dependent tunnelling cell and method of formation thereof
- Patent Title (中): 自旋依赖隧道细胞及其形成方法
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Application No.: US12067585Application Date: 2005-09-20
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Publication No.: US07867788B2Publication Date: 2011-01-11
- Inventor: De Come Buttet , Michel Hehn , Stephane Zoll
- Applicant: De Come Buttet , Michel Hehn , Stephane Zoll
- Applicant Address: US TX Austin FR Paris FR Crolles
- Assignee: Freescale Semiconductor, Inc.,Centre National de la Recherché Scientifique (CNRS),STMicroelectronics (Crolles 2) SAS
- Current Assignee: Freescale Semiconductor, Inc.,Centre National de la Recherché Scientifique (CNRS),STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: US TX Austin FR Paris FR Crolles
- International Application: PCT/EP2005/011642 WO 20050920
- International Announcement: WO2007/038971 WO 20070412
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A Spin-Dependent Tunnelling cell comprises a first barrier layer of a first material and a second barrier layer of a second material sandwiched between a first ferromagnetic layer and a second ferromagnetic layer. The first and second barrier layers are formed to a combined thicknesses so that a Tunnelling Magnetoresistance versus voltage characteristic of the cell has a maximum at a non-zero bias voltage.
Public/Granted literature
- US20090243007A1 SPIN-DEPENDENT TUNNELLING CELL AND METHOD OF FORMATION THEREOF Public/Granted day:2009-10-01
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