Invention Grant
- Patent Title: Contact clean by remote plasma and repair of silicide surface
- Patent Title (中): 通过远程等离子体接触清洁并修复硅化物表面
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Application No.: US12490133Application Date: 2009-06-23
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Publication No.: US07867789B2Publication Date: 2011-01-11
- Inventor: Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
- Applicant: Xinliang Lu , Chien-Teh Kao , Chiukin Steve Lai , Mei Chang
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Method for recovering treated metal silicide surfaces or layers are provided. In at least one embodiment, a substrate having an at least partially oxidized metal silicide surface disposed thereon is cleaned to remove the oxidized regions to provide an altered metal silicide surface. The altered metal silicide surface is then exposed to one or more silicon-containing compounds at conditions sufficient to recover the metal silicide surface.
Public/Granted literature
- US20090305500A1 Contact Clean by Remote Plasma and Repair of Silicide Surface Public/Granted day:2009-12-10
Information query
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