Invention Grant
- Patent Title: Manufacturing method of light emitting diode apparatus
- Patent Title (中): 发光二极管装置的制造方法
-
Application No.: US12143486Application Date: 2008-06-20
-
Publication No.: US07867795B2Publication Date: 2011-01-11
- Inventor: Ching-Chuan Shiue , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
- Applicant: Ching-Chuan Shiue , Shih-Peng Chen , Chao-Min Chen , Huang-Kun Chen
- Applicant Address: TW Taoyuan Hsien
- Assignee: Delta Electronics Inc.
- Current Assignee: Delta Electronics Inc.
- Current Assignee Address: TW Taoyuan Hsien
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Priority: TW96125036A 20070710
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A manufacturing method of a light emitting diode (LED) apparatus includes the steps of: forming at least one temporary substrate, which is made by a curable material, on a LED device; and forming at least a thermal-conductive substrate on the LED device. The manufacturing method does not need the step of adhering the semiconductor structure onto another substrate by using an adhering layer, and can make the devices to be in sequence separated after removing the temporary substrate, thereby obtaining several LED apparatuses. As a result, the problem of current leakage due to the cutting procedure can be prevented so as to reduce the production cost and increase the production yield.
Public/Granted literature
- US20090014747A1 MANUFACTURING METHOD OF LIGHT EMITTING DIODE APPARATUS Public/Granted day:2009-01-15
Information query
IPC分类: