Invention Grant
- Patent Title: Structure replication through ultra thin layer transfer
- Patent Title (中): 通过超薄层转移的结构复制
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Application No.: US12120020Application Date: 2008-05-13
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Publication No.: US07867805B2Publication Date: 2011-01-11
- Inventor: Rainer Krause , Markus Schmidt
- Applicant: Rainer Krause , Markus Schmidt
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Schubert Law Group PLLC
- Agent Steven L. Bennett
- Priority: EP07108816 20070524
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
Methods and apparatus for forming a product from ultra thin layers of a base material are disclosed. Some embodiments provide a process that allows one to structure a silicon base material, like the ingot, and to transfer this structure into a respective silicon process step. Some embodiments provide a process that allows one to structure any complex structured layer stacks, where the layers can be applied on top of each other using, e.g., bonding technology.
Public/Granted literature
- US20090283868A1 Structure Replication Through Ultra Thin Layer Transfer Public/Granted day:2009-11-19
Information query
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