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US07867822B2 Semiconductor memory device 有权
半导体存储器件

  • Patent Title: Semiconductor memory device
  • Patent Title (中): 半导体存储器件
  • Application No.: US12618542
    Application Date: 2009-11-13
  • Publication No.: US07867822B2
    Publication Date: 2011-01-11
  • Inventor: Sang-Yun Lee
  • Applicant: Sang-Yun Lee
  • Agency: Schmeiser Olsen & Watts LLP
  • Priority: KR10-2003-0040920 20030624; KR10-2003-0047515 20030712; KR10-2008-0046991 20080521; KR10-2008-0050946 20080530; KR10-2008-0100892 20081014; KR10-2008-0100893 20081014; KR2008-123595 20081205
  • Main IPC: H01L21/01
  • IPC: H01L21/01
Semiconductor memory device
Abstract:
A method includes forming a switching device which includes a vertical channel spaced apart from a semiconductor substrate, and forming a storage device which is positioned on opposed sides of the switching device. The storage device includes a cylindrically shaped storage node, a plate electrode coupled to the storage node, and a dielectric film which is formed between the storage node and plate electrode, the storage nodes being electrically connected to the switching device.
Abstract(Chinese):

一种方法包括形成开关装置，其包括与半导体衬底间隔开的垂直沟道，以及形成位于开关装置的相对侧上的存储装置。 存储装置包括圆柱形存储节点，耦合到存储节点的平板电极和形成在存储节点和平板电极之间的介电膜，存储节点电连接到开关装置。

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