Invention Grant
- Patent Title: Method for producing substrate
- Patent Title (中): 生产基材的方法
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Application No.: US12257697Application Date: 2008-10-24
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Publication No.: US07867894B2Publication Date: 2011-01-11
- Inventor: Hideaki Sakaguchi
- Applicant: Hideaki Sakaguchi
- Applicant Address: JP Nagano-shi, Nagano
- Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee: Shinko Electric Industries Co., Ltd.
- Current Assignee Address: JP Nagano-shi, Nagano
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2007-277438 20071025
- Main IPC: H01L21/302
- IPC: H01L21/302
Abstract:
A metallic film 43 that becomes the matrix of pad 32 is formed on semiconductor substrate 41. Next, through hole 31 is formed in the semiconductor substrate 41 facing the metallic film 43 at the portion corresponding to an area where the pad 32 is formed. Thereafter, penetration electrode 17 is formed in through hole 31. Next, penetration portion 49 to expose the side of the penetration electrode 17 is formed in the semiconductor substrate 41. Next, an insulative member 16 is formed to be filled up in at least the penetration portion 49. After that, the pad 32 is formed by patterning the metallic film 43.
Public/Granted literature
- US20090117738A1 METHOD FOR PRODUCING SUBSTRATE Public/Granted day:2009-05-07
Information query
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