Invention Grant
US07867895B2 Method of fabricating improved interconnect structure with a via gouging feature absent profile damage to the interconnect dielectric
有权
利用通孔型沟槽特征制造改进的互连结构的方法，而不对互连电介质造成损伤
- Patent Title: Method of fabricating improved interconnect structure with a via gouging feature absent profile damage to the interconnect dielectric
- Patent Title (中): 利用通孔型沟槽特征制造改进的互连结构的方法，而不对互连电介质造成损伤
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Application No.: US11858166Application Date: 2007-09-20
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Publication No.: US07867895B2Publication Date: 2011-01-11
- Inventor: Chih-Chao Yang , Keith Kwong Hon Wong
- Applicant: Chih-Chao Yang , Keith Kwong Hon Wong
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Wenjie Li
- Main IPC: H01L21/4763
- IPC: H01L21/4763
Abstract:
An interconnect structure including a gouging feature at the bottom of the via openings and a method of forming the same, which does not introduce either damages caused by Ar sputtering into the dielectric material that includes the via and line openings, nor plating voids into the structure are provided. The method includes the uses of at least one infusion process that forms an infused surface region within a conductive material of a lower interconnect level. The infused surface region has a different etch rate as compared with the conductive material and thus in a subsequent etching process, the infused surface region can be selectively removed forming a gouging feature within the structure.
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