Invention Grant
- Patent Title: Reduction of etch-rate drift in HDP processes
- Patent Title (中): 降低HDP工艺中的蚀刻速率漂移
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Application No.: US12204503Application Date: 2008-09-04
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Publication No.: US07867921B2Publication Date: 2011-01-11
- Inventor: Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
- Applicant: Anchuan Wang , Young S. Lee , Manoj Vellaikal , Jason Thomas Bloking , Jin Ho Jeon , Hemant P. Mungekar
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Townsend and Townsend and Crew
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
Public/Granted literature
- US20090075489A1 REDUCTION OF ETCH-RATE DRIFT IN HDP PROCESSES Public/Granted day:2009-03-19
Information query
IPC分类:
