Invention Grant
- Patent Title: Film forming method for dielectric film
- Patent Title (中): 电介质膜成膜方法
-
Application No.: US12086030Application Date: 2006-12-05
-
Publication No.: US07867922B2Publication Date: 2011-01-11
- Inventor: Shinji Ide , Yasuhiro Oshima , Yusaku Kashiwagi
- Applicant: Shinji Ide , Yasuhiro Oshima , Yusaku Kashiwagi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2005-350765 20051205
- International Application: PCT/JP2006/324263 WO 20061205
- International Announcement: WO2007/066658 WO 20070614
- Main IPC: H01L21/31
- IPC: H01L21/31 ; H01L21/469
Abstract:
The present invention is a film forming method for an SiOCH film, comprising a unit-film-forming step including: a deposition step of depositing an SiOCH film element by using an organic silicon compound as a raw material and by using a plasma CVD method; and a hydrogen plasma processing step of providing a hydrogen plasma process to the deposited SiOCH film element, wherein the unit-film-forming step is repeated several times so as to form an SiOCH film on a substrate.
Public/Granted literature
- US20090152686A1 Film Forming Method for Dielectric Film Public/Granted day:2009-06-18
Information query
IPC分类:
