Invention Grant
US07868243B2 Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter
有权
基于互连的纳米线,纳米结构和用作热电转换器的纳米结构的制造方法
- Patent Title: Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter
- Patent Title (中): 基于互连的纳米线,纳米结构和用作热电转换器的纳米结构的制造方法
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Application No.: US11826293Application Date: 2007-07-13
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Publication No.: US07868243B2Publication Date: 2011-01-11
- Inventor: Marc Plissonnier , Frederic Gaillard , Raphael Salot , Jean-Antoine Gruss
- Applicant: Marc Plissonnier , Frederic Gaillard , Raphael Salot , Jean-Antoine Gruss
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oliff & Berridge, PLC
- Priority: FR0606617 20060720
- Main IPC: H01L35/00
- IPC: H01L35/00 ; H01L21/44

Abstract:
Method for producing a nanostructure based on interconnected nanowires, nanostructure and use as thermoelectric converter The nanostructure comprises two arrays of nanowires made from respectively n-doped and p-doped semi-conducting material. The nanowires of the first array, for example of n type, are formed for example by VLS growth. A droplet of electrically conducting material that acted as catalyst during the growth step remains on the tip of each nanowire of the first array at the end of growth. A nanowire of the second array is then formed around each nanowire of the first array by covering a layer of electrically insulating material formed around each nanowire of the first array, and the associated droplet, with a layer of p-type semi-conducting material. A droplet thus automatically connects a nanowire of the first array with a single coaxial nanowire of the second array. This type of nanostructure can be used in particular to form a thermoelectric converter.
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