Invention Grant
- Patent Title: Lithography system, sensor and measuring method
- Patent Title (中): 光刻系统,传感器和测量方法
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Application No.: US11521705Application Date: 2006-09-14
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Publication No.: US07868300B2Publication Date: 2011-01-11
- Inventor: Pieter Kruit , Erwin Slot , Tijs Frans Teepen , Marco Jan Jaco Wieland , Stijn Willem Karel Herman Steenbrink
- Applicant: Pieter Kruit , Erwin Slot , Tijs Frans Teepen , Marco Jan Jaco Wieland , Stijn Willem Karel Herman Steenbrink
- Applicant Address: NL CJ Delft
- Assignee: Mapper Lithography IP B.V.
- Current Assignee: Mapper Lithography IP B.V.
- Current Assignee Address: NL CJ Delft
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Main IPC: H01J3/00
- IPC: H01J3/00

Abstract:
Lithography system, sensor and method for measuring properties of a massive amount of charged particle beams of a charged particle beam system, in particular a direct write lithography system, in which the charged particle beams are converted into light beams by using a converter element, using an array of light sensitive detectors such as diodes, CCD or CMOS devices, located in line with said converter element, for detecting said light beams, electronically reading out resulting signals from said detectors after exposure thereof by said light beams, utilizing said signals for determining values for one or more beam properties, thereby using an automated electronic calculator, and electronically adapting the charged particle system so as to correct for out of specification range values for all or a number of said charged particle beams, each for one or more properties, based on said calculated property values.
Public/Granted literature
- US20070057204A1 Lithography system, sensor and measuring method Public/Granted day:2007-03-15
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