Invention Grant
- Patent Title: Resistance variable memory device and method of fabrication
- Patent Title (中): 电阻可变存储器件及其制造方法
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Application No.: US12068108Application Date: 2008-02-01
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Publication No.: US07868310B2Publication Date: 2011-01-11
- Inventor: Kristy A. Campbell
- Applicant: Kristy A. Campbell
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dickstein Shapiro LLP
- Main IPC: H01L45/00
- IPC: H01L45/00
Abstract:
Methods and apparatus for providing a resistance variable memory device with agglomeration prevention and thermal stability. According to one embodiment, a resistance variable memory device is provided having at least one tin-chalcogenide layer proximate at least one chalcogenide glass layer. The invention also relates to methods of forming such a memory device.
Public/Granted literature
- US20080164456A1 Resistance variable memory device and method of fabrication Public/Granted day:2008-07-10
Information query
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