Invention Grant
- Patent Title: Phase change memory device and method of manufacture
- Patent Title (中): 相变存储器件及其制造方法
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Application No.: US12111258Application Date: 2008-04-29
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Publication No.: US07868313B2Publication Date: 2011-01-11
- Inventor: Matthew J. Breitwisch , Chung H. Lam , Hsiang-Lan Lung , Bipin Rajendran , Alejandro G. Schrott , Yu Zhu
- Applicant: Matthew J. Breitwisch , Chung H. Lam , Hsiang-Lan Lung , Bipin Rajendran , Alejandro G. Schrott , Yu Zhu
- Applicant Address: US NY Armonk TW
- Assignee: International Business Machines Corporation,Macronix International Co., Ltd.
- Current Assignee: International Business Machines Corporation,Macronix International Co., Ltd.
- Current Assignee Address: US NY Armonk TW
- Agency: Cantor Colburn LLP
- Agent Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A phase change memory control ring lower electrode is disclosed. The lower electrode includes an outer ring electrode in thermal contact with a phase change memory element, an inner seed layer disposed within the outer ring electrode and in contact with the phase change memory element, and an electrically conductive bottom layer coupled to the outer ring electrode.
Public/Granted literature
- US20090268507A1 PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURE Public/Granted day:2009-10-29
Information query
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