Invention Grant
US07868318B2 Quantum well field-effect transistors with composite spacer structures, apparatus made therewith, and methods of using same
有权
具有复合间隔结构的量子井场效应晶体管，由其制成的器件及其使用方法
- Patent Title: Quantum well field-effect transistors with composite spacer structures, apparatus made therewith, and methods of using same
- Patent Title (中): 具有复合间隔结构的量子井场效应晶体管，由其制成的器件及其使用方法
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Application No.: US12291231Application Date: 2008-11-07
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Publication No.: US07868318B2Publication Date: 2011-01-11
- Inventor: Mantu Hudait , Robert S. Chau , Marko Radosavljevic , Ravi Pillarisetty , Gilbert Dewey
- Applicant: Mantu Hudait , Robert S. Chau , Marko Radosavljevic , Ravi Pillarisetty , Gilbert Dewey
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agent John N. Greaves
- Main IPC: H01L31/00
- IPC: H01L31/00
Abstract:
A quantum well (QW) layer is provided in a semiconductive device. The QW layer is covered with a composite spacer above QW layer. The composite spacer includes an InP spacer first layer and an InAlAs spacer second layer above and on the InP spacer first layer. The semiconductive device includes InGaAs bottom and top barrier layers respectively below and above the QW layer. The semiconductive device also includes a high-k gate dielectric layer that sits on the InP spacer first layer in a gate recess. A process of forming the QW layer includes using an off-cut semiconductive substrate.
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