Invention Grant
- Patent Title: Semiconductor device having antenna over thin film integrated circuit
- Patent Title (中): 具有天线薄膜集成电路的半导体器件
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Application No.: US12362462Application Date: 2009-01-29
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Publication No.: US07868328B2Publication Date: 2011-01-11
- Inventor: Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
- Applicant: Shunpei Yamazaki , Atsuo Isobe , Tetsuji Yamaguchi , Hiromichi Godo
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2004-160353 20040528
- Main IPC: H01L29/786
- IPC: H01L29/786
Abstract:
The present invention provides a semiconductor device capable of being mass-produced and a manufacturing method of the semiconductor device. The present invention also provides a semiconductor device using an extreme thin integrated circuit and a manufacturing method of the semiconductor device. Further, the present invention provides a low power consumption semiconductor device and a manufacturing method of the semiconductor device. According to one aspect of the present invention, a semiconductor device that has a semiconductor nonvolatile memory element transistor over an insulating surface in which a floating gate electrode of the memory transistor is formed by a plurality of conductive particles or semiconductor particles is provided.
Public/Granted literature
- US20090194803A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2009-08-06
Information query
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