Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
-
Application No.: US12264539Application Date: 2008-11-04
-
Publication No.: US07868336B2Publication Date: 2011-01-11
- Inventor: Hiroaki Fujimoto , Yoshihiro Tomita
- Applicant: Hiroaki Fujimoto , Yoshihiro Tomita
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Steptoe & Johnson LLP
- Priority: JP2007-302332 20071122
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L23/02 ; H01L21/00
Abstract:
According to the present invention, protrusions 4 are formed on electrodes 3 of semiconductor elements 6, and an optical member 7 is secured on the semiconductor element 6 with an adhesive 8 so as to be pressed onto the protrusions 4.
Public/Granted literature
- US20090134505A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-05-28
Information query
IPC分类:
