Invention Grant
- Patent Title: Light emitting diode and method for manufacturing the same
- Patent Title (中): 发光二极管及其制造方法
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Application No.: US12136915Application Date: 2008-06-11
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Publication No.: US07868337B2Publication Date: 2011-01-11
- Inventor: Hwa Mok Kim , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
- Applicant: Hwa Mok Kim , Duck Hwan Oh , Dae Won Kim , Dae Sung Kal
- Applicant Address: KR Ansan-si
- Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee: Seoul Opto Device Co., Ltd.
- Current Assignee Address: KR Ansan-si
- Agency: H.C. Park & Associates, PLC
- Priority: KR10-2007-0062196 20070625
- Main IPC: H01L33/00
- IPC: H01L33/00
Abstract:
Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.
Public/Granted literature
- US20080315244A1 LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2008-12-25
Information query
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