Invention Grant
- Patent Title: Semiconductor device with heat-resistant gate
- Patent Title (中): 具有耐热栅的半导体器件
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Application No.: US12149980Application Date: 2008-05-12
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Publication No.: US07868360B2Publication Date: 2011-01-11
- Inventor: Shunpei Yamazaki
- Applicant: Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP9-168021 19970610
- Main IPC: H01L21/8236
- IPC: H01L21/8236

Abstract:
There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/drain regions. Then, a heat treatment is performed to getter nickel element in the active layer and to drive it into the source/drain regions. At the same time, the source/drain regions can be annealed out. The gate electrodes of tantalum can withstand this heat treatment.
Public/Granted literature
- US20090026507A1 Semiconductor device and method of fabricating same Public/Granted day:2009-01-29
Information query
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