Invention Grant
- Patent Title: SOI on package hypersensitive sensor
- Patent Title (中): 封装超敏感传感器上的SOI
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Application No.: US12252452Application Date: 2008-10-16
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Publication No.: US07868362B2Publication Date: 2011-01-11
- Inventor: Todd Andrew Randazzo , Ronald James Jensen , Thomas Keyser
- Applicant: Todd Andrew Randazzo , Ronald James Jensen , Thomas Keyser
- Applicant Address: US NJ Morristown
- Assignee: Honeywell International Inc.
- Current Assignee: Honeywell International Inc.
- Current Assignee Address: US NJ Morristown
- Agency: Shumaker & Sieffert, P.A.
- Main IPC: H01L27/148
- IPC: H01L27/148

Abstract:
A hypersensitive semiconductor die structure is disclosed, in which flip-chip packaging is used in conjunction with a modified SOI die in which a thick silicon support substrate has been removed to increase sensitivity of the sensing device. Rather than being located beneath layers of interconnects and dielectric, the disclosed structure places the sensing devices close to the surface, more closely exposed to the environment in which sensing is to occur. The structure also allows for the placement of sensing films on nearer to the sensing devices and/or an oxide layer overlying the sensing devices.
Public/Granted literature
- US20090096113A1 SOI on Package Hypersensitive Sensor Public/Granted day:2009-04-16
Information query
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