Invention Grant
- Patent Title: Complementary metal oxide semiconductor (CMOS) image sensor
- Patent Title (中): 互补金属氧化物半导体(CMOS)图像传感器
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Application No.: US12544426Application Date: 2009-08-20
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Publication No.: US07868368B2Publication Date: 2011-01-11
- Inventor: Dong Bin Park
- Applicant: Dong Bin Park
- Applicant Address: KR Seoul
- Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee: Dongbu Electronics Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Saliwanchik, Lloyd & Saliwanchik
- Priority: KR10-2005-0133167 20051229
- Main IPC: H01L31/113
- IPC: H01L31/113

Abstract:
A CMOS image sensor and a method for manufacturing the same are provided. The CMOS image sensor enlarges an area of a real image and prevents interference between adjacent pixels by forming a plurality of microlenses on a convex surface and forming a light blocking layer in the space between each of color filters. The CMOS image sensor can include photodiodes, a first planarization layer, R, G, B color filter layers, a second planarization layer having holes filled with a light blocking layer, and a plurality of microlenses.
Public/Granted literature
- US20090302361A1 CMOS Image Sensor and Method for Manufacturing the Same Public/Granted day:2009-12-10
Information query
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