Invention Grant
US07868388B2 Embedded memory in a CMOS circuit and methods of forming the same
有权
CMOS电路中的嵌入式存储器及其形成方法
- Patent Title: Embedded memory in a CMOS circuit and methods of forming the same
- Patent Title (中): CMOS电路中的嵌入式存储器及其形成方法
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Application No.: US11669850Application Date: 2007-01-31
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Publication No.: US07868388B2Publication Date: 2011-01-11
- Inventor: Christopher J. Petti
- Applicant: Christopher J. Petti
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Dugan & Dugan, PC
- Main IPC: H01L29/76
- IPC: H01L29/76
Abstract:
In some aspects, a memory circuit is provided that includes (1) a two-terminal memory element formed on a substrate; and (2) a CMOS transistor formed on the substrate and adapted to program the two-terminal memory element. The two-terminal memory element is formed between a gate layer and a first metal layer of the memory circuit. Numerous other aspects are provided.
Public/Granted literature
- US20080179685A1 EMBEDDED MEMORY IN A CMOS CIRCUIT AND METHODS OF FORMING THE SAME Public/Granted day:2008-07-31
Information query
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