Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12253289Application Date: 2008-10-17
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Publication No.: US07868412B2Publication Date: 2011-01-11
- Inventor: Shintaro Okamoto
- Applicant: Shintaro Okamoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Foley & Lardner LLP
- Priority: JP2007-270757 20071018
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/76
Abstract:
A semiconductor device according to an embodiment of the invention includes: a semiconductor substrate; a well, having a well contact connection region, formed in the semiconductor substrate; a transistor formed on the well; an isolation region formed between the transistor formed on the well, and the well contact connection region; and a silicide layer formed between a bottom surface of the isolation region, and the semiconductor substrate.
Public/Granted literature
- US20090121311A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME Public/Granted day:2009-05-14
Information query
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