Invention Grant
US07868417B2 Semiconductor device including a plurality of fuse elements and attenuation members between or around the plurality of fuse elements 有权
半导体器件包括在多个熔丝元件之间或周围的多个熔丝元件和衰减元件

  • Patent Title: Semiconductor device including a plurality of fuse elements and attenuation members between or around the plurality of fuse elements
  • Patent Title (中): 半导体器件包括在多个熔丝元件之间或周围的多个熔丝元件和衰减元件
  • Application No.: US12010548
    Application Date: 2008-01-25
  • Publication No.: US07868417B2
    Publication Date: 2011-01-11
  • Inventor: Sumio Ogawa
  • Applicant: Sumio Ogawa
  • Applicant Address: JP Chuo-ku, Tokyo
  • Assignee: Elpida Memory, Inc.
  • Current Assignee: Elpida Memory, Inc.
  • Current Assignee Address: JP Chuo-ku, Tokyo
  • Agency: McGinn IP Law Group, PLLC
  • Priority: JP2007-016713 20070126
  • Main IPC: H01L23/525
  • IPC: H01L23/525 H01L21/82
Semiconductor device including a plurality of fuse elements and attenuation members between or around the plurality of fuse elements
Abstract:
A semiconductor device includes plural fuse elements which can be disconnected by irradiating a laser beam, and attenuation members which are located between the plural fuse elements as viewed two-dimensionally and can attenuate the laser beam. Each attenuation member includes plural columnar bodies. With this arrangement, the attenuation members including plural columnar units absorb the laser beam leaked out from a fuse element to be disconnected to a semiconductor substrate side. The laser beam is also scattered by Fresnel diffraction. Therefore, the columnar body can efficiently attenuate the laser beam, without generating a crack in the insulation film by absorbing excessive energy.
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