Invention Grant
US07868445B2 Integrated structures and methods of fabrication thereof with fan-out metallization on a chips-first chip layer
有权
集成结构及其制造方法,在芯片第一芯片层上具有扇出金属化
- Patent Title: Integrated structures and methods of fabrication thereof with fan-out metallization on a chips-first chip layer
- Patent Title (中): 集成结构及其制造方法,在芯片第一芯片层上具有扇出金属化
-
Application No.: US12144840Application Date: 2008-06-24
-
Publication No.: US07868445B2Publication Date: 2011-01-11
- Inventor: James E. Kohl , Charles W. Eichelberger
- Applicant: James E. Kohl , Charles W. Eichelberger
- Applicant Address: US MA Woburn
- Assignee: EPIC Technologies, Inc.
- Current Assignee: EPIC Technologies, Inc.
- Current Assignee Address: US MA Woburn
- Agency: Heslin Rothenberg Farley & Mesiti P.C.
- Agent Kevin P. Radigan, Esq.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
Electronic modules and methods of fabrication are provided implementing a first metallization level directly on a chips-first chip layer. The chips-first layer includes chips, each with a pad mask over an upper surface and openings to expose chip contact pads. Structural dielectric material surrounds and physically contacts the side surfaces of the chips, and has an upper surface which is parallel to an upper surface of the chips. A metallization layer is disposed over the front surface of the chips-first layer, residing at least partially on the pad masks of the chips, and extending over one or more edges of the chips. Together, the pad masks of the chips, and the structural dielectric material electrically isolate the metallization layer from the edges of the chips, and from one or more electrical structures of the chips in the chips-first layer.
Public/Granted literature
Information query
IPC分类: