Invention Grant
US07868449B2 Semiconductor substrate and method of connecting semiconductor die to substrate
有权
半导体基板和将半导体管芯连接到基板的方法
- Patent Title: Semiconductor substrate and method of connecting semiconductor die to substrate
- Patent Title (中): 半导体基板和将半导体管芯连接到基板的方法
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Application No.: US12471409Application Date: 2009-05-25
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Publication No.: US07868449B2Publication Date: 2011-01-11
- Inventor: Kai Yun Yow , Poh Leng Eu
- Applicant: Kai Yun Yow , Poh Leng Eu
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Charles Bergere
- Main IPC: H01L23/04
- IPC: H01L23/04
Abstract:
A semiconductor substrate includes a substrate layer and a circuit film formed over the substrate layer. One or more openings are formed in the circuit film and the substrate layer. Conductive plates are formed over the circuit film at the peripheries of the openings. A semiconductor die is attached to the circuit film, below the openings with an adhesive material. A conductive material is disposed in the openings to electrically connect the semiconductor die to the conductive plates.
Public/Granted literature
- US20100295169A1 SEMICONDUCTOR SUBSTRATE AND METHOD OF CONNECTING SEMICONDUCTOR DIE TO SUBSTRATE Public/Granted day:2010-11-25
Information query
IPC分类:
