Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12200940Application Date: 2008-08-29
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Publication No.: US07868641B2Publication Date: 2011-01-11
- Inventor: Toshikatsu Jinbo
- Applicant: Toshikatsu Jinbo
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Young & Thompson
- Priority: JP2007-222095 20070829
- Main IPC: G01R31/02
- IPC: G01R31/02 ; G01R31/28

Abstract:
A semiconductor device with technology for externally deciding if the stress test was performed or not. A semiconductor device includes a stress test circuit and a stress test decision circuit. The stress test circuit outputs control signals for executing the stress test to the stress test decision circuit and the object for testing. The stress test decision circuit then outputs the decision results if the stress test was performed, based on the control signals.
Public/Granted literature
- US20090058453A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-03-05
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