Invention Grant
US07868703B2 Passive spectrum control for pulsed RF power amplifiers 有权
脉冲RF功率放大器的无源频谱控制

  • Patent Title: Passive spectrum control for pulsed RF power amplifiers
  • Patent Title (中): 脉冲RF功率放大器的无源频谱控制
  • Application No.: US12434178
    Application Date: 2009-05-01
  • Publication No.: US07868703B2
    Publication Date: 2011-01-11
  • Inventor: Liewei He
  • Applicant: Liewei He
  • Applicant Address: US MA Waltham
  • Assignee: Raytheon Company
  • Current Assignee: Raytheon Company
  • Current Assignee Address: US MA Waltham
  • Agency: Lando & Anastasi, LLP
  • Main IPC: H03F3/19
  • IPC: H03F3/19
Passive spectrum control for pulsed RF power amplifiers
Abstract:
A multi-stage RF power amplifier including passive circuitry for frequency spectrum control. In one example, a multi-stage RF power amplifier includes a first RF power transistor, a second RF power transistor, and a passive combination bandpass filter and impedance matching network coupled between the first RF power transistor and the second RF power transistor.
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