Invention Grant
- Patent Title: Microvaristor-based overvoltage protection
- Patent Title (中): 基于微电阻的过电压保护
-
Application No.: US12255831Application Date: 2008-10-22
-
Publication No.: US07868732B2Publication Date: 2011-01-11
- Inventor: Markus Hoidis , Felix Greuter , Lise Donzel , Reto Kessler
- Applicant: Markus Hoidis , Felix Greuter , Lise Donzel , Reto Kessler
- Applicant Address: CH Zurich
- Assignee: ABB Research Ltd
- Current Assignee: ABB Research Ltd
- Current Assignee Address: CH Zurich
- Agency: Buchanan Ingersoll & Rooney PC
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
The disclosure relates to an overvoltage protection means containing ZnO microvaristor particles for protecting electrical elements and a method to produce the means. Single microvaristor particles are placed in an arrangement having a monolayer thickness and are electrically coupled to the electrical element to protect it against overvoltages. Embodiments, among other things, relate to: 1-dimensional or 2-dimensional arrangements of microvaristor particles; placement of single microvaristors on a carrier; the carrier being planar or string-like, being structured, being a sticky tape, having fixation means for fixing the microvaristors, or having electrical coupling means. The monolayered overvoltage protection means allows very tight integration and high flexibility in shaping and adapting it to the electric or electronic element. Furthermore, reduced capacitance and hence reaction times of overvoltage protection are achieved.
Public/Granted literature
- US20090045907A1 Microvaristor-Based Overvoltage Protection Public/Granted day:2009-02-19
Information query