Invention Grant
US07868850B2 Field emitter array with split gates and method for operating the same
有权
具有分裂门的场发射极阵列及其操作方法
- Patent Title: Field emitter array with split gates and method for operating the same
- Patent Title (中): 具有分裂门的场发射极阵列及其操作方法
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Application No.: US11223130Application Date: 2005-09-12
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Publication No.: US07868850B2Publication Date: 2011-01-11
- Inventor: Sungho Jin , Dong-Wook Kim , In Kyung Yoo
- Applicant: Sungho Jin , Dong-Wook Kim , In Kyung Yoo
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Main IPC: G09G3/28
- IPC: G09G3/28 ; G09G5/00 ; G06F3/02
Abstract:
Field emitter arrays with split gates and methods for operating the same. A field emitter array may include one or more pairs of split gates, each connected to a corresponding voltage source, the split gates forming at least one gate hole for at least one emitter tip. Voltages, for example, AC voltages V1 and V2 may be applied to the split gates to perform one- or two-dimensional scanning or tilting depending on a ratio of V1 and V2.
Public/Granted literature
- US20070235772A1 Field emitter array with split gates and method for operating the same Public/Granted day:2007-10-11
Information query
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