Invention Grant
- Patent Title: Photoelectonic sensor
- Patent Title (中): 光电传感器
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Application No.: US12430536Application Date: 2009-04-27
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Publication No.: US07869048B2Publication Date: 2011-01-11
- Inventor: Motoharu Okuno
- Applicant: Motoharu Okuno
- Applicant Address: JP Kyoto
- Assignee: Omron Corporation
- Current Assignee: Omron Corporation
- Current Assignee Address: JP Kyoto
- Agency: Foley & Lardner LLP
- Priority: JPP2008-117373 20080428; JPP2009-64611 20090317
- Main IPC: G01N21/55
- IPC: G01N21/55

Abstract:
This invention provides a coaxial regressive reflection type photoelectronic sensor capable of enhancing detection accuracy. A sensor head includes a light emitting diode for emitting a detection light; a lens for converting the detection light to a parallel light and projecting the parallel light to an exterior as an external detection light; a half mirror for separating an optical path of the detection light and an optical path of a return light from the regressive reflection plate; and a photodiode for receiving the return light from the half mirror. The lens includes a convex surface formed to convert a signal light to a parallel light, and a plane tilted from a perpendicular direction with respect to the parallel light or an axis connecting a light emitting diode chip and a center portion of the convex surface. The reflected light of an external signal light at the plane passes a path different from that of the return light so as to be avoided from entering the photodiode chip.
Public/Granted literature
- US20090268206A1 PHOTOELECTONIC SENSOR Public/Granted day:2009-10-29
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