Invention Grant
- Patent Title: Acoustic bandgap structures adapted to suppress parasitic resonances in tunable ferroelectric capacitors and method of operation and fabrication therefore
- Patent Title (中): 因此，适用于抑制可调谐铁电电容器中的寄生谐振的声带结构及其操作和制造方法
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Application No.: US11899062Application Date: 2007-09-04
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Publication No.: US07869187B2Publication Date: 2011-01-11
- Inventor: William E. McKinzie, III
- Applicant: William E. McKinzie, III
- Applicant Address: US NH Nashua
- Assignee: Paratek Microwave, Inc.
- Current Assignee: Paratek Microwave, Inc.
- Current Assignee Address: US NH Nashua
- Agency: Guntin Meles & Gust
- Agent Ed Guntin
- Main IPC: H01G4/005
- IPC: H01G4/005 ; H01G4/06
Abstract:
An acoustic bandgap structure can include a stack of at least three ferroelectric layers with a top side and bottom side of each of the ferroelectric layers contacting an electrode layer, where the ferroelectric layers and the electrode layers form a substantially periodic structure in the direction normal to the ferroelectric and electrode layers and where an acoustic characteristic impedance and thickness of each layer are selected to realize an acoustic bandgap over a desired frequency band for the purpose of improving the device Q.
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