Invention Grant
- Patent Title: Memory core and semiconductor memory device having the same
-
Application No.: US12220422Application Date: 2008-07-24
-
Publication No.: US07869241B2Publication Date: 2011-01-11
- Inventor: Je-Min Yu , In-Chul Jeong
- Applicant: Je-Min Yu , In-Chul Jeong
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Mills & Onello, LLP
- Priority: KR10-2007-0076898 20070731
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
A memory core capable of decreasing the area of core conjunction region is disclosed. The memory core includes a first sub word-line driving circuit and a first sub word-line control signal generating circuit. The first sub word-line driving circuit is disposed in a first region, and generates a first word-line driving signal to provide the first word-line driving signal to an array unit. The first sub word-line control signal generating circuit is disposed in the first region, and generates the first sub word-line control signal based on a sub word-line driving signal. Therefore, the memory core has a small size and, consequently so can the semiconductor device.
Public/Granted literature
- US20090034315A1 Memory core and semiconductor memory device having the same Public/Granted day:2009-02-05
Information query