Invention Grant
US07869253B2 Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell
有权
确定电阻性存储单元的存储状态的方法和测量电阻存储单元的存储状态的装置
- Patent Title: Method of determining a memory state of a resistive memory cell and device measuring the memory state of a resistive memory cell
- Patent Title (中): 确定电阻性存储单元的存储状态的方法和测量电阻存储单元的存储状态的装置
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Application No.: US11507362Application Date: 2006-08-21
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Publication No.: US07869253B2Publication Date: 2011-01-11
- Inventor: Corvin Liaw , Michael Angerbauer , Heinz Hoenigschmid
- Applicant: Corvin Liaw , Michael Angerbauer , Heinz Hoenigschmid
- Applicant Address: DE Munich
- Assignee: Qimonda AG
- Current Assignee: Qimonda AG
- Current Assignee Address: DE Munich
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/14
Abstract:
A method of determining the memory state of a resistive memory cell including a first electrode, a second electrode and an active material being arranged between the first electrode and the second electrode, comprises generating a read capacity by applying a voltage between the first electrode and the second electrode, discharging the read capacity over the active material of the memory cell, and determining the memory state of the memory cell in dependence on a change of the voltage during the discharge of the read capacity.
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