Invention Grant
US07869261B2 Semiconductor memory which enables reliable data writing with low supply voltage by improving the conductance via access transistors during write operation
有权
半导体存储器，其通过在写入操作期间通过存取晶体管改善电导，从而以低电源电压进行可靠的数据写入
- Patent Title: Semiconductor memory which enables reliable data writing with low supply voltage by improving the conductance via access transistors during write operation
- Patent Title (中): 半导体存储器，其通过在写入操作期间通过存取晶体管改善电导，从而以低电源电压进行可靠的数据写入
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Application No.: US11396511Application Date: 2006-04-04
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Publication No.: US07869261B2Publication Date: 2011-01-11
- Inventor: Takashi Ozawa
- Applicant: Takashi Ozawa
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Arent Fox LLP
- Priority: JP2005-367150 20051220
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A semiconductor memory maintains securely the stored contents in the memory cells, and it is written with data reliably even in a case where a relatively low supply voltage is applied. A memory cell M00 comprises a pair of inverters cross-coupled with each other, a first switching unit provided between bit line BL and the output terminal of one of the inverters, and a second switching unit provided between bit line XBL and the output terminal of the other inverter. The first switching unit and the second switching unit are controlled to be conductive such that the conductance of the switches be larger for the writing operation than for the reading operation.
Public/Granted literature
- US20070139996A1 Semiconductor memory and method for controlling semiconductor memory Public/Granted day:2007-06-21
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