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US07869267B2 Method for low power accessing a phase change memory device 有权
用于低功率访问相变存储器件的方法

Method for low power accessing a phase change memory device
Abstract:
A method for accessing a phase change memory device, wherein a first sub-plurality of bitlines is grouped in a first group and a second sub-plurality of bitlines is grouped in a second group. At least a bitline in the first and second groups are selected; currents are supplied to the selected bitlines; and a selected wordline is biased. The bitlines are selected by selecting a first bitline in the first group and, while the first bitline is selected, selecting a second bitline in the second group which is arranged on the selected wordline symmetrically to the first bitline in the first group.
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