Invention Grant
- Patent Title: Memory structure capable of bit-wise write or overwrite
- Patent Title (中): 能够进行逐位写入或覆盖的内存结构
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Application No.: US11888441Application Date: 2007-07-31
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Publication No.: US07869275B2Publication Date: 2011-01-11
- Inventor: Matthew A. Grant , David J. Kunst , Steven Huynh
- Applicant: Matthew A. Grant , David J. Kunst , Steven Huynh
- Applicant Address: VG
- Assignee: Active-Semi, Inc.
- Current Assignee: Active-Semi, Inc.
- Current Assignee Address: VG
- Agency: Imperium Patent Works
- Agent Darien K. Wallace
- Main IPC: G11C11/34
- IPC: G11C11/34

Abstract:
An integrated circuit includes a plurality of tiles. One tile is a master tile. Other tiles contain writable registers of memory structures. Information for configuring circuitry of the tile is stored in the register in the tile. An individual one of the registers can be written via the master tile. Each memory structure of a register includes a non-volatile floating gate cell (that stores the configuration information) as well as a volatile cell. All transistors have the same gate insulator thickness. Although a programming pulse signal is applied to all memory structures, the state of the non-volatile cell of a memory structure is only changed if the state stored by the associated non-volatile cell differs from the state stored by the volatile cell. Floating gates are automatically refreshed by the programming pulse signal. By storing configuration information in each tile, inefficiencies associated with using blocks of non-volatile memory are avoided.
Public/Granted literature
- US20080084743A1 Memory stucture capable of bit-wise write or overwrite Public/Granted day:2008-04-10
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