Invention Grant
- Patent Title: Nand type memory and programming method thereof
- Patent Title (中): Nand型存储器及其编程方法
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Application No.: US11946893Application Date: 2007-11-29
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Publication No.: US07869276B2Publication Date: 2011-01-11
- Inventor: Wen-Chiao Ho , Chin-Hung Chang , Kuen-Long Chang , Chun-Hsiung Hung
- Applicant: Wen-Chiao Ho , Chin-Hung Chang , Kuen-Long Chang , Chun-Hsiung Hung
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Thomas, Kayden, Horstemeyer & Risley
- Main IPC: G11C16/06
- IPC: G11C16/06 ; G11C16/10 ; G11C16/22

Abstract:
A memory includes many memory regions. The memory regions have multiple multi-level cells. Each memory region includes a first bit line, a second bit line, a data buffer and a protecting unit. The first bit line is coupled to a first column of the multi-level cells. The second bit line is coupled to a second column of the multi-level cells. The data buffer is coupled to the first bit line and the second bit line and for storing data to be programmed into the multi-level cells. The protecting unit is coupled to the first bit line, the second bit line and the data buffer and is for preventing a programming error from occurring.
Public/Granted literature
- US20090154233A1 NAND TYPE MEMORY AND PROGRAMMING METHOD THEREOF Public/Granted day:2009-06-18
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