Invention Grant
- Patent Title: Erasing method for nonvolatile memory
- Patent Title (中): 非易失性存储器的擦除方法
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Application No.: US12498010Application Date: 2009-07-06
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Publication No.: US07869284B1Publication Date: 2011-01-11
- Inventor: Ting-Chang Chang , Fu-Yen Jian , Hung-Wei Li
- Applicant: Ting-Chang Chang , Fu-Yen Jian , Hung-Wei Li
- Applicant Address: TW Hsichih
- Assignee: Acer Incorporated
- Current Assignee: Acer Incorporated
- Current Assignee Address: TW Hsichih
- Agency: Nikolai & Mersereau, P.A.
- Agent C. G. Mersereau
- Priority: TW98120225 20090617
- Main IPC: G11C11/04
- IPC: G11C11/04
Abstract:
The present invention relates to an erasing method for nonvolatile memory, which uses forward bias between the source/drain region and body contact to inject majority carriers into the body, and then accelerates the majority carriers by an electric field between the body and the gate to energize the majority carriers to overcome the oxide barrier and to erase the nonvolatile memory.
Public/Granted literature
- US20100322014A1 ERASING METHOD FOR NONVOLATILE MEMORY Public/Granted day:2010-12-23
Information query
