Invention Grant
- Patent Title: Low voltage operation bias current generation circuit
- Patent Title (中): 低压运行偏置电流产生电路
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Application No.: US12037649Application Date: 2008-02-26
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Publication No.: US07869285B2Publication Date: 2011-01-11
- Inventor: Dong Pan
- Applicant: Dong Pan
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc
- Current Assignee: Micron Technology, Inc
- Current Assignee Address: US ID Boise
- Agent Fletcher Yoder
- Main IPC: G11C5/14
- IPC: G11C5/14

Abstract:
Devices and systems for generating a bias current with a low minimum voltage, for example, are disclosed. One such device includes a first transistor having a source coupled to a voltage supply, a drain coupled to a first node, and a gate coupled to a second node, a second transistor having a source coupled to a reference, and a drain and a gate coupled to the first node, a third transistor having a source coupled to the reference, a drain coupled to a third node, and a gate coupled to the first node, a first resistive element coupled between the voltage supply and the third node, a second resistive element coupled between the voltage supply and the second node, and a fourth transistor having a source coupled to the reference, a drain coupled to the second node, and a gate coupled to the third node.
Public/Granted literature
- US20090213666A1 LOW VOLTAGE OPERATION BIAS CURRENT GENERATION CIRCUIT Public/Granted day:2009-08-27
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