Invention Grant
US07869285B2 Low voltage operation bias current generation circuit 有权
低压运行偏置电流产生电路

  • Patent Title: Low voltage operation bias current generation circuit
  • Patent Title (中): 低压运行偏置电流产生电路
  • Application No.: US12037649
    Application Date: 2008-02-26
  • Publication No.: US07869285B2
    Publication Date: 2011-01-11
  • Inventor: Dong Pan
  • Applicant: Dong Pan
  • Applicant Address: US ID Boise
  • Assignee: Micron Technology, Inc
  • Current Assignee: Micron Technology, Inc
  • Current Assignee Address: US ID Boise
  • Agent Fletcher Yoder
  • Main IPC: G11C5/14
  • IPC: G11C5/14
Low voltage operation bias current generation circuit
Abstract:
Devices and systems for generating a bias current with a low minimum voltage, for example, are disclosed. One such device includes a first transistor having a source coupled to a voltage supply, a drain coupled to a first node, and a gate coupled to a second node, a second transistor having a source coupled to a reference, and a drain and a gate coupled to the first node, a third transistor having a source coupled to the reference, a drain coupled to a third node, and a gate coupled to the first node, a first resistive element coupled between the voltage supply and the third node, a second resistive element coupled between the voltage supply and the second node, and a fourth transistor having a source coupled to the reference, a drain coupled to the second node, and a gate coupled to the third node.
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