Invention Grant
- Patent Title: Precharge voltage supply circuit and semiconductor device using the same
- Patent Title (中): 预充电电源电路和使用其的半导体器件
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Application No.: US12459064Application Date: 2009-06-26
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Publication No.: US07869291B2Publication Date: 2011-01-11
- Inventor: Sang Il Park
- Applicant: Sang Il Park
- Applicant Address: KR Icheon-si
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Icheon-si
- Agency: Cooper & Dunham LLP
- Agent John P. White
- Priority: KR10-2006-0138797 20061229
- Main IPC: G11G7/00
- IPC: G11G7/00

Abstract:
A precharge voltage supply circuit and a semiconductor device using the same are disclosed. The semiconductor device includes a first comparator for comparing a precharge voltage with a first reference voltage having a first voltage level and outputting a first compare signal as a result of the comparison, a second comparator for comparing the precharge voltage with a second reference voltage having a second voltage level and outputting a second compare signal as a result of the comparison, a decoder configured to receive and decode the first compare signal and the second compare signal and output a plurality of control signals as a result of the decoding, and a precharge voltage supply circuit configured to receive the plurality of control signals and supply the precharge voltage.
Public/Granted literature
- US20090268536A1 Precharge voltage supply circuit and semiconductor device using the same Public/Granted day:2009-10-29
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