Invention Grant
- Patent Title: Semiconductor device and yield calculation method
- Patent Title (中): 半导体器件和产量计算方法
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Application No.: US11972709Application Date: 2008-01-11
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Publication No.: US07870520B2Publication Date: 2011-01-11
- Inventor: Morimi Osawa
- Applicant: Morimi Osawa
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2007-003524 20070111
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A semiconductor device yield calculation method and a computer program that include selecting from a designed device pattern a specified first pattern and a second pattern that differs from the first pattern, finding a probability that the second pattern passes a test when the first pattern passes the test for each of a plurality of distances between the first pattern and the second pattern, and finding a yield of the device pattern based on a product of the probability and a yield value for the first pattern.
Public/Granted literature
- US20080172644A1 SEMICONDUCTOR DEVICE AND YIELD CALCULATION METHOD Public/Granted day:2008-07-17
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