Invention Grant
- Patent Title: Mass of silicon solidified from molten state and process for producing the same
- Patent Title (中): 从熔融状态固化的硅质量及其制造方法
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Application No.: US11597222Application Date: 2005-05-23
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Publication No.: US07871590B2Publication Date: 2011-01-18
- Inventor: Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
- Applicant: Satoru Wakamatsu , Junichirou Nakashima , Shigeki Sugimura
- Applicant Address: JP Shunan-shi
- Assignee: Tokuyama Corporation
- Current Assignee: Tokuyama Corporation
- Current Assignee Address: JP Shunan-shi
- Agency: The Webb Law Firm
- Priority: JP2004-152189 20040521
- International Application: PCT/JP2005/009358 WO 20050523
- International Announcement: WO2005/113436 WO 20051201
- Main IPC: C01B33/02
- IPC: C01B33/02 ; B29B9/00 ; B22F9/00 ; C30B29/06

Abstract:
A solidified mass for a high-purity multicrystal silicon material that is preferably applicable to producing crystal type silicon ingots for photo voltaics, and a process for producing the solidified mass are provided. The mass of silicon solidified from molten state is a solidified mass produced by dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, said solidified mass containing bubbles and having (i) an apparent density of not less than 1.5 g/cm3 and not more than 2.2 g/cm3 and (ii) a compressive strength of not less than 5 MPa and not more than 50 MPa. The process for producing a mass of silicon solidified from molten state includes the steps of dropping molten silicon into a receiving vessel and allowing the vessel to receive the molten silicon, wherein the surface temperature of the vessel for receiving the molten silicon is not lower than 0° C. and not higher than 1000° C., and the receiving vessel is allowed to receive the molten silicon at a rate of 1×10−3 to 5×10−1 g/sec·cm2.
Public/Granted literature
- US20080038177A1 Cooled Lump From Molten Silicon And Process For Producing The Same Public/Granted day:2008-02-14
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