Invention Grant
- Patent Title: Near-field exposure apparatus and near-field exposure method
- Patent Title (中): 近场曝光装置和近场曝光方法
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Application No.: US11914040Application Date: 2007-10-10
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Publication No.: US07871744B2Publication Date: 2011-01-18
- Inventor: Yasuhisa Inao , Toshiki Ito , Natsuhiko Mizutani
- Applicant: Yasuhisa Inao , Toshiki Ito , Natsuhiko Mizutani
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2006-276093 20061010
- International Application: PCT/JP2007/070220 WO 20071010
- International Announcement: WO2008/047818 WO 20080424
- Main IPC: G03F9/00
- IPC: G03F9/00 ; G21K5/00 ; H05G1/00

Abstract:
A near-field exposure apparatus includes a near-field exposure mask and a mechanism places a substrate, to be exposed, opposed to the near-field exposure mask. A mechanism performs relative alignment of the near-field exposure mask and the substrate to be exposed. A mechanism closely contacts the near-field exposure mask and the substrate to be exposed, with each other. A mechanism projects exposure light to the near-field exposure mask, and a soft X-ray irradiating device removes static electricity charged in at least one of the near-field exposure mask and the substrate to be exposed. The soft X-ray irradiating device is disposed such that the near-field exposure mask is located between the soft X-ray irradiating device and the substrate to be exposed.
Public/Granted literature
- US20090311631A1 NEAR-FIELD EXPOSURE APPARATUS AND NEAR-FIELD EXPOSURE METHOD Public/Granted day:2009-12-17
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