Method of fabricating PMOS and NMOS transistor on the same substrate

Invention Grant

US07871878B2 Method of fabricating PMOS and NMOS transistor on the same substrate 有权

Title translation: 在同一衬底上制造PMOS和NMOS晶体管的方法

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Patent Title: Method of fabricating PMOS and NMOS transistor on the same substrate
Patent Title (中): 在同一衬底上制造PMOS和NMOS晶体管的方法
Application No.: US12425476

Application Date: 2009-04-17
Publication No.: US07871878B2

Publication Date: 2011-01-18
Inventor: Junli Wang , Toyotaka Kataoka , Masaki Saito
Applicant: Junli Wang , Toyotaka Kataoka , Masaki Saito
Applicant Address: JP Tokyo
Assignee: Sony Corporation
Current Assignee: Sony Corporation
Current Assignee Address: JP Tokyo
Agency: SNR Denton US LLP
Priority: JP2004-294562 20041007
Main IPC: H01L21/8238
IPC: H01L21/8238 ; H01L27/118

Method of fabricating PMOS and NMOS transistor on the same substrate

Abstract:

A method of manufacturing a semiconductor device that includes a first and second device regions on a substrate. The method includes the steps of forming an insulation layer on the substrate, laminating a first semiconductor layer having a plane orientation different from the surface of the substrate on the insulation layer and exposing the substrate by removing the insulation layer and the first semiconductor layer from the second device region. A second semiconductor layer having the same plane orientation as the substrate and that is made of a strained layer is formed by epitaxial growth on the exposed substrate in the second device region.

Abstract(Chinese):

一种制造半导体器件的方法，其包括在衬底上的第一和第二器件区域。该方法包括以下步骤：在衬底上形成绝缘层，在绝缘层上层压具有不同于衬底表面的平面取向的第一半导体层，并通过从绝缘层上除去绝缘层和第一半导体层而暴露衬底第二设备区域。具有与衬底相同的平面取向并由应变层制成的第二半导体层通过在第二器件区域中暴露的衬底上外延生长而形成。

Public/Granted literature

US20090221134A1 Semiconductor Device and Method of Manufacturing Semiconductor Device Public/Granted day:2009-09-03

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70	.由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77	..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78	...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82	....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822	.....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232	......场效应工艺
H01L21/8234	.......MIS工艺
H01L21/8238	........互补场效应晶体管，例如CMOS